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Power Electronics Semiconductor Devices
Power Electronics Semiconductor Devices
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About The Book:
This book links recent developments in lots of research and development laboratories in neuro-scientific electrical engineering, concentrating on the keys to energy electronics and their use. The initial section handles the primary techniques of power electronics, MOSFETs and IGBTs, including parallel associations and societies. Another section examines silicon carbide and its own prospect of energy electronics applications and its own representative constraints. Then, the dedicated section offers capacitors, and the primary negative components in the power electronics, accompanied by a modeling method which allows calculation of stray inputs, necessary for precise simulation of waveform modulation. The thermal behavior from the power switches follows, and Part 3 suggests some important predictions linked to PowerPower Electronics integration.
Contents Of The Book:
Chapter 1: Power MOSFET Transistors.
Chapter 2: Insulated Gate Bipolar Transistors.
Chapter 3: Series and Parallel Connections of MOS and IGBT.
Chapter 4: Silicon Carbide Applications in Power Electronics.
Chapter 5: Capacitors for Power Electronics.
Chapter 6: Modeling Connections.
Chapter 7: Commutation Cell.
Chapter 8: Power Electronics and Thermal Management.
Chapter 9: Towards Integrated Power Electronics.
Information About The Book:
Title: Power Electronics Semiconductor Devices.
Language: English.
Size: 14.3 Mb.
Pages: 559
Format: PDF
Year: 2009.
Edition: 1.
Author: Robert Perret.