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Understanding Modern Transistors and Diodes Download PDF

Download Understanding Modern Transistors and Diodes PDF
Understanding Modern Transistors and Diodes PDF
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About Of The Book :

The solution to this dilemma comes back to the first objective of this book: to provide a rigorous and digestible theoretical basis, from which the understanding of devices of the modern era, and of the near future, follows naturally. This is how Understanding Modern Transistors and Diodes meets the challenge of covering a wide breadth of topics in the depth they warrant while managing to limit the material to that which can be covered in one or two one-term courses. The requisite physics is treated properly once and is then approximated, and seen to be approximated, where justifiable when being applied to various devices. The physics has to be quantum mechanical for several reasons: band structure is important for all the devices we discuss, particularly for heterostructural diodes and transistors of both field-effect and bipolar varieties; electron-photon interactions are obviously relevant in solar cells and light-emitting diodes; tunneling is an important leakage-current mechanism in field-effect transistors; future one-dimensional transistors may be so short that ballistic, rather than dissipative, transport will be operative. Even in ‘classical’ devices transport must be treated rigorously in view of the trends towards miniaturization: the Drift-Diffusion Equation cannot be blindly applied but must be justified after proper treatment of its parent, the Boltzmann Transport Equation. One intermediate solution to this equation, the charge-density continuity equation, provides the basis for our rigorous and formal description of capacitance. This device property is crucially important to the transistors presented in the application-specific chapters in the book on digital switching, high-frequency performance, and semiconductor memories. As a final emphasis on the rigor of this book, the traditional SPICE-related model for the MOS field-effect transistor is put in its rightful place, i.e., as a computationally expedient approximation to the ‘surface-potential’ model. If SPICE has helped design circuits that have enabled higher-performance computers, then that has been its downfall, because those computers can now permit the more rigorous surface-potential model to be used for the more accurate simulation of integrated circuits! Understanding Modern Transistors and Diodes are intended for students at the graduate or senior-undergraduate level who are studying electronics, microelectronics, or nanoelectronics, within the disciplines of electrical and computer engineering, engineering physics, or physics. However, there is sufficient material on basic semiconductor theory and elementary device physics for the book to be appropriate and also for a junior-level course on solid-state electronic devices. Additionally, the inclusion in the book of specific chapters on the application of the foundation material to modern, high-performance transistors and diodes, and a glimpse into the future of true nanotransistors, should make the book of interest to practitioners and managers in the semiconductor industry, particularly those who have not had the opportunity to keep up with recent developments in the field. It is my hope that the depth and breadth of this book might make it a ‘one-stop shop’ for several levels of courses on semiconductor devices, and for device-practitioner neophytes and veterans alike. The material in this book, in various stages of development, has been used by me for senior-level undergraduate courses and for graduate-level courses on semiconductor devices at UBC, for short courses for engineers at PMC-Sierra in Vancouver, and to graduate students at the University of Pisa and at the Technical .

Contents Of the book :

1 Introduction
2 Energy band basics
3 Electron and hole concentrations
4 Thermal equilibrium
5 Charge transport
6 np- and Np-junction basics
7 Solar cells
8 Light-emitting diodes
9 HBT basics
10 MOSFET basics
11 HJFET basics
12 Transistor capacitances
13 Transistors for high-speed logic
14 Transistors for high frequencies
15 Transistors for memories
16 Transistors for high power
17 Transistors for low noise
18 Transistors for the future
19 Appendices 

Information Of The Book :

Title: Understanding Modern Transistors and Diodes 
Language: English.
Size: 3,07 MB
Pages: 355
Year : 2011
Format: PDF.